Sign In | Join Free | My benadorassociates.com
China Shenzhen Retechip Electronics Co., Ltd logo
Shenzhen Retechip Electronics Co., Ltd
Professional quality, beyond value.
Verified Supplier

3 Years
Home > IGBT Power Transistor >

STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W

Product Categories
Shenzhen Retechip Electronics Co., Ltd
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W

  • 1
  • 2
  • 3

Brand Name : ST

Model Number : STGW80H65DFB

Place of Origin : Original

MOQ : 5 pcs

Price : Negotiate

Payment Terms : T/T, Western Union, MoneyGram

Supply Ability : 30000 pcs Per Month

Delivery Time : 3-5 work days

Packaging Details : 600 Pcs/box

Type : 650V 80A IGBT Transistors

Description : IGBT Transistors 650V 80A 469W Field Stop

Package : TO-247-3

Packaging : Tube&Box

Shipping by : DHL\UPS\Fedex\EMS\HK Post\TNT

Lead time : 3-5 Working days

Contact Now

STGW80H65DFB Insulated Gate Bipolar Transistor 650V 80A 469W IGBT Transistors

Applications

• Photovoltaic inverters

• High frequency converters

Specifications

Product Attribute Attribute Value
STMicroelectronics
Product Category: IGBT Transistors
Si
TO-247-3
Through Hole
Single
650 V
1.6 V
- 20 V, + 20 V
120 A
469 W
- 55 C
+ 175 C
Tube
Continuous Collector Current Ic Max: 80 A
Gate-Emitter Leakage Current: 250 nA
Subcategory: IGBTs
Unit Weight: 1.340411 oz

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A

• Tight parameter distribution

• Safe paralleling

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Shopping Guide

Shipping Delivery period

For in-stock parts, orders are estimated to ship out in 3 days.
Once shipped, estimated delivery time depends on the below carriers you chose:
DHL Express, 3-7 business days.
DHL eCommerce,12-22 business days.
FedEx International Priority, 3-7 business days
EMS, 10-15 business days.
Registered Air Mail, 15-30 business days.
Shipping rates

After confirming the order, we will evaluate the shipping cost based on the weight of the goods
Shipping option

We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.
Shipping tracking

We will notify you by email with tracking number once order is shipped.

Returning

warranty

 Returning

Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.
Warranty

All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
Ordering

Payment

T/T,PayPal, Credit Card includes Visa, Master, American Express.


Product Tags:

STGW80H65DFB IGBT Transistor

      

Insulated Gate Bipolar Transistor 650V

      

IGBT Transistor 469W

      
Quality STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W for sale

STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Shenzhen Retechip Electronics Co., Ltd
*Subject:
*Message:
Characters Remaining: (0/3000)
 
You May Like